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PD - 95456
IRLIZ44NPBF
Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description
l
HEXFET(R) Power MOSFET
D
VDSS = 55V RDS(on) = 0.022
G S
ID = 30A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLP AK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
30 22 160 45 0.3 16 210 25 4.5 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.

Max.
3.3 65
Units
C/W 6/23/04
IRLIZ44NPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.022 VGS = 10V, ID = 17A 0.025 VGS = 5.0V, ID = 17A 0.035 VGS = 4.0V, ID = 14A 2.0 V VDS = VGS , ID = 250A S VDS = 25V, ID = 25A 25 VDS = 55V, V GS = 0V A 250 VDS = 44V, V GS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V 48 ID = 25A 8.6 nC VDS = 44V 25 VGS = 5.0V, See Fig. 6 and 13 VDD = 28V ID = 25A ns RG = 3.4, VGS = 5.0V RD = 1.1, See Fig. 10 Between lead, 4.5 6mm (0.25in.) nH G from package 7.5 and center of die contact 1700 VGS = 0V 400 VDS = 25V pF 150 = 1.0MHz, See Fig. 5 12 = 1.0MHz
Min. 55 1.0 21
Typ. 0.070 11 84 26 15
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 30 showing the A G integral reverse 160 p-n junction diode. S 1.3 V TJ = 25C, IS = 17A, VGS = 0V 80 120 ns TJ = 25C, IF = 25A 210 320 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 15V, starting TJ = 25C, L = 470H RG = 25, IAS = 25A. (See Figure 12) ISD 25A, di/dt 270A/s, VDD V(BR)DSS, T J 175C
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRLZ44N data and test conditions
IRLIZ44NPBF
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
1000
ID , Drain-to-Source Current (A)
100
ID , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
100
10
10
2.5V
2.5V 20s PULSE WIDTH T J = 25C
1 10
1 0.1
100
A
VDS , Drain-to-Source Voltage (V)
1 0.1
20s PULSE WIDTH T J = 175C
1 10
100
A
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 41A
I D , Drain-to-Source Current (A)
2.5
TJ = 25C
100
2.0
TJ = 175C
1.5
10
1.0
0.5
1 2.0 3.0 4.0 5.0
V DS= 25V 20s PULSE WIDTH
6.0 7.0 8.0 9.0
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLIZ44NPBF
2800
2400
VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = Cds + C gd
15
I D = 25A V DS = 44V V DS = 28V
12
C, Capacitance (pF)
2000
1600
9
1200
Coss
6
800
Crss
400
3
0 1 10 100
A
0 0 10 20 30
FOR TEST CIRCUIT SEE FIGURE 13
40 50 60 70
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
I D , Drain Current (A)
100
10s
100
100s
TJ = 175C TJ = 25C
10
1ms
10 0.4 0.8 1.2 1.6
VGS = 0V
2.0
A
2.4
1 1
TC = 25C TJ = 175C Single Pulse
10
10ms
100
A
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLIZ44NPBF
35
V DS
30
RD
VGS RG 5.0V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
ID , Drain Current (A)
25 20 15 10 5 0
-VDD
Fig 10a. Switching Time Test Circuit
VDS 90%
25 50 75 100 125 150 175
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLIZ44NPBF
VDS
EAS , Single Pulse Avalanche Energy (mJ)
L D.U.T.
500
TOP
400
BOTTOM
ID 10A 17A 25A
RG
+
V - DD
5.0 V
IAS tp
0.01
300
Fig 12a. Unclamped Inductive Test Circuit
200
100
V(BR)DSS tp VDD VDS
0
VDD = 25V
25 50 75 100 125 150
175
A
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRLIZ44NPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRLIZ44NPBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L OT CODE 3 432 AS S E M B L E D O N W W 2 4 1 9 9 9 IN T H E AS S E M B L Y L IN E "K " IN T E R N AT IO N AL R E CT IF IE R L OGO AS S E M B L Y L OT CODE P AR T N U M B E R
IR F I8 40 G 924 K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
D AT E C O D E Y E AR 9 = 1 9 9 9 WE E K 24 L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/04

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